MODEL REPRESENTATIONS ON INTRODUCTION OF RARE-EARTH DOPANTS (Eu AND Y) IN NANOCRYSTALLINE SILICON.

In this paper, we reveal model representations on the nature of RE dopant centers in nanocrystalline silicon films. Using the results of chemical composition analysis and temperature measurements of resistance, we compare theoretical and experimental data. Crucially, we determine that the nature of dopant centers changes depending on the conditions of films processing (temperature deposition) and dopants concentration. [ABSTRACT FROM AUTHOR]