Effect of UV-Assisted RTA on the Electrical Properties of (Ba,Sr)TiO3 Films for Low Temperature Embedding of Decoupling Capacitor.

Polycrystalline Ba_0.4Sr_0.6TiO₃ (BST) thin films grown at 350°C with UV-assisted rapidly thermal annealing (RTA) showed a high-k value of 183 at 100 kHz. The 100 nm thick BST film with UV-assisted RTA exhibited a high capacitance density of 16.2 W/μm² and a low dissipation factor of 0.48% at 100 kHz with a low leakage current density of 1 × 10^-8 A/cm² at 0.5 MV/cm. The quadratic and linear voltage coefficients of capacitances of the BST film with UV-assisted RTA were -155 ppm/V² and 231 ppm/V, respectively. All these make the BST decoupling capacitor very suitable for use in radio-frequency circuits and mixed-signal integrated circuits. [ABSTRACT FROM AUTHOR]