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SILICON CARBIDE BASED BROADBAND ETALON EMITTERS FOR THE UV-REGION.

Authors :
Genkin, ?. M.
Genkina, V. K.
Gerayimchuk, M. D.
Germash, L. P.
Nevedovsky, P. V.
Source :
Naukovi visti NTUU - KPI; 2008, Vol. 2008 Issue 4, p20-26, 7p
Publication Year :
2008

Abstract

In this paper, we studied the influence of the microplasma structure, operating voltage and temperature on the ultraviolet component of the spectrum distribution of quantum output of SiC-6H and SiC-15R based light emitting diodes, working in the electrical breakdown regime. Moreover, revealed was the well-formed connection of samples parameters with the initial crystallites properties and microplasma structure of the breakdown. The obtained results proved the probability of the range extension of the devices' stable work in the ultraviolet region to 250nm. [ABSTRACT FROM AUTHOR]

Details

Language :
Russian
ISSN :
18100546
Volume :
2008
Issue :
4
Database :
Supplemental Index
Journal :
Naukovi visti NTUU - KPI
Publication Type :
Academic Journal
Accession number :
35648620