A Deterministic Solver to the Boltzmann-Poisson System Including Quantization Effects for Silicon-MOSFETs.

We present a deterministic solver to the Boltzmann-Poisson system for simulating the electron transport in silicon MOSFETs. This system consists of the Boltzmann transport equations (BTEs) for free electrons and for the twodimensional electron gas (2DEG) formed at the Si/SiO2 interface. Moreover, the Poisson equation is coupled to the BTEs. Eigenenergies and wave functions of the 2DEG are dynamically calculated from the Schrödinger-Poisson system. Numerical studies prove the applicability and the efficiency of the proposed numerical technique for simulating ultrasmall semiconductor devices. [ABSTRACT FROM AUTHOR]