Spintronic Transport in II-VI Magnetic Semiconductor Resonant Tunneling Devices.

We investigate electron transport through resonant tunneling diodes doped with magnetic impurities. Due to exchange interaction between impurities and carriers, there arises a giant Zeeman splitting which dominates the I-V curves. We discuss a simple model which accounts for spin effects in these systems and examine its applicability in realistic samples. [ABSTRACT FROM AUTHOR]