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Interface Related Radiative Recombination on a Type-II Broken-Gap Single GalnAsSb/InAs Heterojunction.
- Source :
- Nonequilibrium Carrier Dynamics in Semiconductors; 2006, p329-332, 4p
- Publication Year :
- 2006
-
Abstract
- Magneto-photoluminescence studies have been performed on the type-II broken-gap GalnAsSb/InAs single heterostructures with 2D-electon channel at the interface containing two occupied energy subbnads. Photoluminescence spectra manifest a set of pronounced emission bands in the spectral region of 0.3-0.5 eV and it has been investigated in magnetic fields up to 10 T. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISBNs :
- 9783540365877
- Database :
- Supplemental Index
- Journal :
- Nonequilibrium Carrier Dynamics in Semiconductors
- Publication Type :
- Book
- Accession number :
- 33875583
- Full Text :
- https://doi.org/10.1007/978-3-540-36588-4_75