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Electrical Characterization and Special Properties of FINFET Structures.
Electrical Characterization and Special Properties of FINFET Structures.
- Source :
- Nanoscaled Semiconductor-on-Insulator Structures & Devices; 2007, p199-220, 22p
- Publication Year :
- 2007
-
Abstract
- This paper presents a review into the experimental studies of the effective channel mobility and intrinsic gate leakage current in triple-gate FinFET structures with doped- and undoped-channels and different gate stacks. The characteristics of narrow-fin devices are studied as compared to those of quasi-planar (very-wide fin) devices, and as a function of the fin width. Special features in the behavior of narrow FinFETs are analyzed. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISBNs :
- 9781402063787
- Database :
- Supplemental Index
- Journal :
- Nanoscaled Semiconductor-on-Insulator Structures & Devices
- Publication Type :
- Book
- Accession number :
- 33171138
- Full Text :
- https://doi.org/10.1007/978-1-4020-6380-0_15