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Electrical Characterization and Special Properties of FINFET Structures.

Electrical Characterization and Special Properties of FINFET Structures.

Authors :
Hall, Steve
Lysenko, Vladimir S.
Rudenko, T.
Kilchytska, Valeria
Collaert, N.
Nazarov, Alexei N.
Jurczak, M.
Flandre, Denis
Source :
Nanoscaled Semiconductor-on-Insulator Structures & Devices; 2007, p199-220, 22p
Publication Year :
2007

Abstract

This paper presents a review into the experimental studies of the effective channel mobility and intrinsic gate leakage current in triple-gate FinFET structures with doped- and undoped-channels and different gate stacks. The characteristics of narrow-fin devices are studied as compared to those of quasi-planar (very-wide fin) devices, and as a function of the fin width. Special features in the behavior of narrow FinFETs are analyzed. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISBNs :
9781402063787
Database :
Supplemental Index
Journal :
Nanoscaled Semiconductor-on-Insulator Structures & Devices
Publication Type :
Book
Accession number :
33171138
Full Text :
https://doi.org/10.1007/978-1-4020-6380-0_15