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MuGFET CMOS Process with Midgap Gate Material.
- Source :
- Nanoscaled Semiconductor-on-Insulator Structures & Devices; 2007, p159-164, 6p
- Publication Year :
- 2007
-
Abstract
- An increase in threshold voltage is observed in ultra-thin body MuGFET (multi-gate FET) devices. The threshold increase is due to of lack of carriers at the classical threshold definition. A sufficient amount of carrier build-up requires additional gate voltage (0.12V in our experiment). [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISBNs :
- 9781402063787
- Database :
- Supplemental Index
- Journal :
- Nanoscaled Semiconductor-on-Insulator Structures & Devices
- Publication Type :
- Book
- Accession number :
- 33171134
- Full Text :
- https://doi.org/10.1007/978-1-4020-6380-0_11