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Radiation Effects in Advanced Single- and Multi-Gate SOI MOSFETs.
- Source :
- FinFETs & Other Multi-Gate Transistors; 2008, p257-291, 35p
- Publication Year :
- 2008
-
Abstract
- This Chapter describes the effects of ionizing radiations such as gamma rays and cosmic rays on SOI MOSFETs. These effects are extremely important in military, space and avionics applications. Multi-gate FETs show exceptional resistance to total-dose and single-event effects and could become the new standard in radiation-hardened electronics. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISBNs :
- 9780387717517
- Database :
- Supplemental Index
- Journal :
- FinFETs & Other Multi-Gate Transistors
- Publication Type :
- Book
- Accession number :
- 33080898
- Full Text :
- https://doi.org/10.1007/978-0-387-71752-4_6