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The SOI MOSFET: from Single Gate to Multigate.

Authors :
Colinge, Jean-Pierre
Source :
FinFETs & Other Multi-Gate Transistors; 2008, p1-48, 48p
Publication Year :
2008

Abstract

General introduction of this Chapter shows the evolution of the SOI MOS transistor and retraces the history of the multigate concept. The advantages of multigate FETs in terms of electrostatic integrity and short-channel control are described, and the challenges posed by the appearance of novel effects, some of quantum-mechanical origin, are outlined. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISBNs :
9780387717517
Database :
Supplemental Index
Journal :
FinFETs & Other Multi-Gate Transistors
Publication Type :
Book
Accession number :
33080893
Full Text :
https://doi.org/10.1007/978-0-387-71752-4_1