Structure of rolled-up semiconductor nanotubes.

Authors :: Cullis, A. G.
Hutchison, J. L.
Jin-Phillipp, N. Y.
Deneke, Ch.
Thomas, J.
Kelsch, M.
Songmuang, R.
Stoffel, M.
Schmidt, O. G.
Source :: Microscopy of Semiconducting Materials; 2005, p311-314, 4p
Publication Year :: 2005
Abstract: In this paper, structures of InAs/GaAs and SiGe/Si rolled-up nanotubes (RUNTs) are characterized by using high-resolution transmission electron microscopy (HRTEM) and spatially-resolved electron energy loss spectroscopy. Free-standing RUNTs as well as their cross-sections are investigated. It is found that the walls of the nanotubes are mainly crystalline, and are composed of alternating crystalline and oxide containing noncrystalline layers. Defects form in some nanotubes, where the rolling involves a misorientation. [ABSTRACT FROM AUTHOR]