Advanced MOSFET Gate Dielectrics for High-Performance Microprocessors: Materials Selection and Analytical Challenges.

For semiconductor industry, the challenges to future process technology and advanced materials are outlined in the International Technology Roadmap for Semiconductors (ITRS) [1]. Microelectronic and further nanoelectronic products of the next technology generations will need advanced materials particularly for device structures since the traditional shrinking of feature sizes is reaching fundamental physical limits. Currently, leading-edge microprocessor (MPU) technology is pushing material innovations in the gate stack of metal-oxide-semiconductor field effect transistors (MOSFETs). [ABSTRACT FROM AUTHOR]