Paper Modeling of the inverse base width modulation effect in HBT transistor with graded SiGe base.

MLA

Zaręba, Agnieszka, et al. “Paper Modeling of the Inverse Base Width Modulation Effect in HBT Transistor with Graded SiGe Base.” Journal of Telecommunications & Information Technology, vol. 2007, no. 3, Sept. 2007, pp. 88–92. EBSCOhost, https://doi.org/10.26636/jtit.2007.3.836.

APA

Zaręba, A., Łukasiak, L., & Jakubowski, A. (2007). Paper Modeling of the inverse base width modulation effect in HBT transistor with graded SiGe base. Journal of Telecommunications & Information Technology, 2007(3), 88–92. https://doi.org/10.26636/jtit.2007.3.836

Chicago

Zaręba, Agnieszka, Lidia Łukasiak, and Andrzej Jakubowski. 2007. “Paper Modeling of the Inverse Base Width Modulation Effect in HBT Transistor with Graded SiGe Base.” Journal of Telecommunications & Information Technology 2007 (3): 88–92. doi:10.26636/jtit.2007.3.836.