Effect of Al Incorporation in the Thermal Stability of Atomic-Layer-Deposited HfO2 for Gate Dielectric Applications.

MLA

Yan-Kai Chiou, et al. “Effect of Al Incorporation in the Thermal Stability of Atomic-Layer-Deposited HfO2 for Gate Dielectric Applications.” Journal of The Electrochemical Society, vol. 154, no. 4, Apr. 2007, pp. G99–102. EBSCOhost, https://doi.org/10.1149/1.2472562.

APA

Yan-Kai Chiou, Che-Hao Chang, Chen-Chan Wang, Kun-Yu Lee, Tai-Bor Wu, Raynien Kwo, & Minghwei Hong. (2007). Effect of Al Incorporation in the Thermal Stability of Atomic-Layer-Deposited HfO2 for Gate Dielectric Applications. Journal of The Electrochemical Society, 154(4), G99–G102. https://doi.org/10.1149/1.2472562

Chicago

Yan-Kai Chiou, Che-Hao Chang, Chen-Chan Wang, Kun-Yu Lee, Tai-Bor Wu, Raynien Kwo, and Minghwei Hong. 2007. “Effect of Al Incorporation in the Thermal Stability of Atomic-Layer-Deposited HfO2 for Gate Dielectric Applications.” Journal of The Electrochemical Society 154 (4): G99–102. doi:10.1149/1.2472562.