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Improving the Thermal Stability of Indium Oxide n‑Type Field-Effect Transistors by Enhancing Crystallinity through Ultrahigh-Temperature Rapid Thermal Annealing.
- Source :
- ACS Applied Materials & Interfaces; 1/22/2025, Vol. 17 Issue 3, p5078-5085, 8p
- Publication Year :
- 2025
Details
- Language :
- English
- ISSN :
- 19448244
- Volume :
- 17
- Issue :
- 3
- Database :
- Supplemental Index
- Journal :
- ACS Applied Materials & Interfaces
- Publication Type :
- Academic Journal
- Accession number :
- 182411824
- Full Text :
- https://doi.org/10.1021/acsami.4c18435