Compositionally engineered amorphous InZnO thin-film transistor with high mobility and stability via atmospheric pressure spatial atomic layer deposition.

[Display omitted] • The atmospheric pressure spatial atomic layer deposition (AP-SALD) method was utilized to enhance productivity. • The physical, chemical, and electrical properties of IZO films were examined in relation to their metal cation composition. • The IZO-TFTs maintained their high mobility characteristics (45.7 cm²/Vs) after 50,000 cycles of bi-axial bending tests. Amorphous indium-zinc oxide (IZO) thin films, featuring indium atomic concentrations between 35.2 and 64.2 at.%, were fabricated using atmospheric pressure spatial atomic layer deposition (AP S-ALD) at 250 °C, employing trimethylindium (TMI) and diethylzinc (DEZ) as precursors and ozone as the reactant, based on the atomic layer processing. The crystallinity and chemical bonding states of the IZO films were found to vary with the metal cation composition, as confirmed by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). We fabricated thin-film transistors (TFTs) employing the IZO films as the active layer on polyimide (PI) substrates, achieving high mobility (45.7 cm²/V·s), excellent bias-temperature stress (BTS) stability (ΔV TH = 0.63 V), and maintaining stable electrical properties even after mechanical bending tests along two different axes. This study highlights the successful development of high-performance flexible devices by precisely controlling the metal cation composition using AP S-ALD based on high deposition rate. [ABSTRACT FROM AUTHOR]