Back to Search
Start Over
Selective-Area Growth of Hexagonal-to-Cubic GaN as an n‑Type Metal–Oxide–Semiconductor Field-Effect Transistor Drain on a Nanogrooved Si(100) Substrate.
- Source :
- Crystal Growth & Design; 10/16/2024, Vol. 24 Issue 20, p8285-8291, 7p
- Publication Year :
- 2024
Details
- Language :
- English
- ISSN :
- 15287483
- Volume :
- 24
- Issue :
- 20
- Database :
- Supplemental Index
- Journal :
- Crystal Growth & Design
- Publication Type :
- Academic Journal
- Accession number :
- 180327923
- Full Text :
- https://doi.org/10.1021/acs.cgd.4c00683