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High-Efficiency Doping Outcomes in Homoepitaxial β‑Ga2O3 Films via Pulsed Si Doping with MOCVD.
- Source :
- Crystal Growth & Design; 10/2/2024, Vol. 24 Issue 19, p8101-8111, 11p
- Publication Year :
- 2024
Details
- Language :
- English
- ISSN :
- 15287483
- Volume :
- 24
- Issue :
- 19
- Database :
- Supplemental Index
- Journal :
- Crystal Growth & Design
- Publication Type :
- Academic Journal
- Accession number :
- 180093280
- Full Text :
- https://doi.org/10.1021/acs.cgd.4c01049