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Thermally induced in situ fabrication of TiO2/CN heterojunction dopant for enhancement of hydrogen storage properties of LiAlH4.
- Source :
- Journal of Materials Science & Technology; Dec2024, Vol. 203, p227-236, 10p
- Publication Year :
- 2024
-
Abstract
- • TiO 2 /CN heterojunction is successfully prepared via one-step calcination with bubble template assisted. • The LiAlH 4 -7 wt% TiO 2 /CN starts to release hydrogen at 76 °C and releases 4.9 wt% H 2 at 120 °C within 50 min. • The heterojunction can generate internal electric field and lower the energy barrier to optimize the movement of electrons. • The in situ formed AlTi 3 N can weaken the Al-H bonds in LiAlH 4 through interfacial charge transfer. Herein, a novel TiO 2 /CN heterojunction material has been prepared by one-step bubble template-assisted calcination to enhance the hydrogen storage capability of LiAlH 4. The TEM, XPS and UPS analysis confirm that a heterostructure is formed between TiO 2 and g-C 3 N 4 successfully. The experimental findings indicate that the TiO 2 /CN significantly enhances the dehydrogenation performance of LiAlH 4. For instance, the LiAlH 4 -7 wt% TiO 2 /CN starts to dehydrogenize at 76 °C (94 °C less than pure LiAlH 4) and releases 6.5 wt% H 2 at 200 °C. Meanwhile, LiAlH 4 -7 wt% TiO 2 /CN releases 4.9 wt% H 2 at 120 °C within 50 min. The mechanism analysis illustrates that AlTi 3 N is formed in situ during ball-milling. And density functional theory (DFT) calculation results reveal that the AlTi 3 N can weaken the Al-H bonds in LiAlH 4 through interfacial charge transfer. Furthermore, the TiO 2 /CN heterostructure creates an internal electric field that generates an electron-rich layer. As a result, the negative electron layer at one end of the TiO 2 /CN heterojunction has an increased affinity for H, which enhances the dehydrogenation reaction of LiAlH 4. Clearly, both the TiO 2 /CN heterostructure and AlTi 3 N contribute to the improvement of the dehydrogenation properties of LiAlH 4. [Display omitted] [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 10050302
- Volume :
- 203
- Database :
- Supplemental Index
- Journal :
- Journal of Materials Science & Technology
- Publication Type :
- Periodical
- Accession number :
- 179526372
- Full Text :
- https://doi.org/10.1016/j.jmst.2024.02.067