High-performance perfect absorption infrared photodetectors with garphene-based SiC grating microstructures.

Due to its diverse crystal configurations with varying bandgaps, Silicon Carbide (SiC) has been widely utilized by numerous researchers in the preparation of photodetectors. In this paper, we propose high performance tunable photodetector with graphene-based SiC grating structure. The photodetector can achieve perfect absorption and the responsivity of 10.61 A/W at 11.7 μm wavelength. The tunable broadband photodetection from 11.4 μm to 12 μm can be obtained by adjust graphene's Fermi level. Compared with existing graphene-based photodetector with or without SiC structures, our structure has more flexible detection and higher performance. In addition, we explain the standing wave phenomenon observed during the tuning of the photodetector structure. This provides a new direction for the development of high-quality infrared photodetectors. • We proposed the High-performance perfect absorption infrared photodetectors with garphene-based SiC grating microstructures. • Compared with existing graphene-based photodetector with or without SiC structures, our structure has better performance. • The photodetector can achieve perfect absorption and the responsivity of 10.61 A/W at 11.7 μm wavelength. • The proposed structure has significant application for the development of high-quality infrared photodetectors. [ABSTRACT FROM AUTHOR]