Cite
Revealing the EuCd2As2 Semiconducting Band Gap via n‑Type La-Doping.
MLA
Nelson, Ryan A., et al. “Revealing the EuCd2As2 Semiconducting Band Gap via N‑Type La-Doping.” Chemistry of Materials, vol. 36, no. 16, Aug. 2024, pp. 7623–32. EBSCOhost, https://doi.org/10.1021/acs.chemmater.4c00656.
APA
Nelson, R. A., King, J., Cheng, S., Williams, A. J., Jozwiak, C., Bostwick, A., Rotenberg, E., Sasmal, S., Kao, I.-H., Tiwari, A., Jones, N. R., Cai, C., Martin, E., Dolocan, A., Shi, L., Kawakami, R. K., Heremans, J. P., Katoch, J., & Goldberger, J. E. (2024). Revealing the EuCd2As2 Semiconducting Band Gap via n‑Type La-Doping. Chemistry of Materials, 36(16), 7623–7632. https://doi.org/10.1021/acs.chemmater.4c00656
Chicago
Nelson, Ryan A., Jesaiah King, Shuyu Cheng, Archibald J. Williams, Chris Jozwiak, Aaron Bostwick, Eli Rotenberg, et al. 2024. “Revealing the EuCd2As2 Semiconducting Band Gap via N‑Type La-Doping.” Chemistry of Materials 36 (16): 7623–32. doi:10.1021/acs.chemmater.4c00656.