TCAD simulation study of dual ferroelectric gate field-effect transistors with a recessed channel geometry for non-volatile memory applications.

Details

Language :

English

ISSN :

03744884

Volume :

85

Issue :

1

Database :

Supplemental Index

Journal :

Journal of the Korean Physical Society

Publication Type :

Academic Journal

Accession number :

178150533

Full Text :

https://doi.org/10.1007/s40042-024-01079-7