Design of Mixed-Dimensional QDs/MoS2/TiO2 Heterostructured Resistive Random-Access Memory with Interfacial Analog Switching Characteristics for Potential Neuromorphic Computing.

Details

Language :

English

ISSN :

26376113

Volume :

6

Issue :

3

Database :

Supplemental Index

Journal :

ACS Applied Electronic Materials

Publication Type :

Academic Journal

Accession number :

176268245

Full Text :

https://doi.org/10.1021/acsaelm.3c01274