The Graphene-Based Transistor with Dual Modifications through Electrostatic and Strain Effects.

Details

Language :

English

ISSN :

19327447

Volume :

127

Issue :

47

Database :

Supplemental Index

Journal :

Journal of Physical Chemistry C

Publication Type :

Academic Journal

Accession number :

174015757

Full Text :

https://doi.org/10.1021/acs.jpcc.3c06674