Self-Assembled Monolayer Doping for MoTe2 Field-Effect Transistors: Overcoming PN Doping Challenges in Transition Metal Dichalcogenides.

MLA

Lee, Dong Hyun, et al. “Self-Assembled Monolayer Doping for MoTe2 Field-Effect Transistors: Overcoming PN Doping Challenges in Transition Metal Dichalcogenides.” ACS Applied Materials & Interfaces, vol. 15, no. 44, Nov. 2023, pp. 51518–26. EBSCOhost, https://doi.org/10.1021/acsami.3c11430.

APA

Lee, D. H., Rabeel, M., Han, Y., Kim, H., Khan, M. F., Kim, D., & Yoo, H. (2023). Self-Assembled Monolayer Doping for MoTe2 Field-Effect Transistors: Overcoming PN Doping Challenges in Transition Metal Dichalcogenides. ACS Applied Materials & Interfaces, 15(44), 51518–51526. https://doi.org/10.1021/acsami.3c11430

Chicago

Lee, Dong Hyun, Muhammad Rabeel, Youngmin Han, Honggyun Kim, Muhammad Farooq Khan, Deok-kee Kim, and Hocheon Yoo. 2023. “Self-Assembled Monolayer Doping for MoTe2 Field-Effect Transistors: Overcoming PN Doping Challenges in Transition Metal Dichalcogenides.” ACS Applied Materials & Interfaces 15 (44): 51518–26. doi:10.1021/acsami.3c11430.