Semiconductor–Semimetal 2D/3D MoS2/SrRuO3(111) TMD/TMO Heterojunction-Based ReRAM Devices.

Details

Language :

English

ISSN :

26376113

Volume :

5

Issue :

10

Database :

Supplemental Index

Journal :

ACS Applied Electronic Materials

Publication Type :

Academic Journal

Accession number :

173176108

Full Text :

https://doi.org/10.1021/acsaelm.3c00907