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Electronic Excitation-Induced Semiconductor-Metal Transitions Enabling Ovonic Threshold Switching in Boron Telluride Glasses.
- Source :
- Chemistry of Materials; 8/22/2023, Vol. 35 Issue 16, p6396-6404, 9p
- Publication Year :
- 2023
Details
- Language :
- English
- ISSN :
- 08974756
- Volume :
- 35
- Issue :
- 16
- Database :
- Supplemental Index
- Journal :
- Chemistry of Materials
- Publication Type :
- Academic Journal
- Accession number :
- 170080970
- Full Text :
- https://doi.org/10.1021/acs.chemmater.3c01097