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Selective Crystallization of Ferroelectric HfxZr1–xO2 via Excimer Laser Annealing.
- Source :
- ACS Applied Electronic Materials; 1/24/2023, Vol. 5 Issue 1, p117-122, 6p
- Publication Year :
- 2023
Details
- Language :
- English
- ISSN :
- 26376113
- Volume :
- 5
- Issue :
- 1
- Database :
- Supplemental Index
- Journal :
- ACS Applied Electronic Materials
- Publication Type :
- Academic Journal
- Accession number :
- 161513867
- Full Text :
- https://doi.org/10.1021/acsaelm.2c01555