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Assessment of Active Dopants and p–n Junction Abruptness Using In Situ Biased 4D-STEM.

Assessment of Active Dopants and p–n Junction Abruptness Using In Situ Biased 4D-STEM.

Authors :
da Silva, Bruno César
Sadre Momtaz, Zahra
Monroy, Eva
Okuno, Hanako
Rouviere, Jean-Luc
Cooper, David
Den Hertog, Martien Ilse
Source :
Nano Letters; 12/14/2022, Vol. 22 Issue 23, p9544-9550, 7p
Publication Year :
2022

Details

Language :
English
ISSN :
15306984
Volume :
22
Issue :
23
Database :
Supplemental Index
Journal :
Nano Letters
Publication Type :
Academic Journal
Accession number :
160840030
Full Text :
https://doi.org/10.1021/acs.nanolett.2c03684