Back to Search Start Over

Poling Sequence-Dependent Tunneling Electroresistance in HfO2‑Based Ferroelectric Tunnel Junctions.

Authors :
Ruan, Yongqi
Zhang, Qi
Lord, Michael
Guo, Yizhong
Wang, Jinzhao
Liu, Jiaolian
Ma, Zhijun
Zhou, Peng
Zhang, Tianjin
Valanoor, Nagarajan
Source :
ACS Applied Electronic Materials; 11/22/2022, Vol. 4 Issue 11, p5171-5176, 6p
Publication Year :
2022

Details

Language :
English
ISSN :
26376113
Volume :
4
Issue :
11
Database :
Supplemental Index
Journal :
ACS Applied Electronic Materials
Publication Type :
Academic Journal
Accession number :
160394537
Full Text :
https://doi.org/10.1021/acsaelm.2c01131