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Performance Improvement of an Al/TiO2/Al Electronic Bipolar Resistive Switching Memory Cell via Inserting an Ultrathin ZrO2 Layer.
- Source :
- ACS Applied Electronic Materials; 11/22/2022, Vol. 4 Issue 11, p5351-5360, 10p
- Publication Year :
- 2022
Details
- Language :
- English
- ISSN :
- 26376113
- Volume :
- 4
- Issue :
- 11
- Database :
- Supplemental Index
- Journal :
- ACS Applied Electronic Materials
- Publication Type :
- Academic Journal
- Accession number :
- 160394517
- Full Text :
- https://doi.org/10.1021/acsaelm.2c01043