Improved Performance of the Al2O3‑Protected HfO2–TiO2 Base Layer with a Self-Assembled CH3NH3PbI3 Heterostructure for Extremely Low Operating Voltage and Stable...

Details

Language :

English

ISSN :

19448244

Volume :

14

Issue :

45

Database :

Supplemental Index

Journal :

ACS Applied Materials & Interfaces

Publication Type :

Academic Journal

Accession number :

160283106

Full Text :

https://doi.org/10.1021/acsami.2c13478