Effective Suppression of MIS Interface Defects Using Boron Nitride toward High-Performance Ta-Doped-β-Ga2O3 MISFETs.

Details

Language :

English

ISSN :

19487185

Volume :

13

Issue :

15

Database :

Supplemental Index

Journal :

Journal of Physical Chemistry Letters

Publication Type :

Academic Journal

Accession number :

156491771

Full Text :

https://doi.org/10.1021/acs.jpclett.2c00722