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Electrodeposition of GeSbTe-Based Resistive Switching Memory in Crossbar Arrays.
- Source :
- Journal of Physical Chemistry C; 12/2/2021, Vol. 125 Issue 47, p26247-2655, 9p
- Publication Year :
- 2021
Details
- Language :
- English
- ISSN :
- 19327447
- Volume :
- 125
- Issue :
- 47
- Database :
- Supplemental Index
- Journal :
- Journal of Physical Chemistry C
- Publication Type :
- Academic Journal
- Accession number :
- 156480415
- Full Text :
- https://doi.org/10.1021/acs.jpcc.1c08549