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Hexagonal Ge Grown by Molecular Beam Epitaxy on Self-Assisted GaAs Nanowires.
- Source :
- Crystal Growth & Design; 1/5/2022, Vol. 21 Issue 1, p32-36, 5p
- Publication Year :
- 2022
Details
- Language :
- English
- ISSN :
- 15287483
- Volume :
- 21
- Issue :
- 1
- Database :
- Supplemental Index
- Journal :
- Crystal Growth & Design
- Publication Type :
- Academic Journal
- Accession number :
- 156020729
- Full Text :
- https://doi.org/10.1021/acs.cgd.1c00945