High-Performance Indium Gallium Tin Oxide Transistors with an Al2O3 Gate Insulator Deposited by Atomic Layer Deposition at a Low Temperature of 150 °C: Roles of Hydrogen and Excess Oxygen in the Al2O3...

Details

Language :

English

ISSN :

19448244

Volume :

13

Issue :

24

Database :

Supplemental Index

Journal :

ACS Applied Materials & Interfaces

Publication Type :

Academic Journal

Accession number :

155939339

Full Text :

https://doi.org/10.1021/acsami.1c04210