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Maximized Hole Trapping in a Polystyrene Transistor Dielectric from a Highly Branched Iminobis(aminoarene) Side Chain.
- Source :
- ACS Applied Materials & Interfaces; 7/28/2021, Vol. 13 Issue 29, p34584-34596, 13p
- Publication Year :
- 2021
Details
- Language :
- English
- ISSN :
- 19448244
- Volume :
- 13
- Issue :
- 29
- Database :
- Supplemental Index
- Journal :
- ACS Applied Materials & Interfaces
- Publication Type :
- Academic Journal
- Accession number :
- 155936275
- Full Text :
- https://doi.org/10.1021/acsami.1c03929