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Toward a Reliable Synaptic Simulation Using Al-Doped HfO2 RRAM.
- Source :
- ACS Applied Materials & Interfaces; 3/4/2020, Vol. 12 Issue 9, p10648-10656, 9p
- Publication Year :
- 2020
Details
- Language :
- English
- ISSN :
- 19448244
- Volume :
- 12
- Issue :
- 9
- Database :
- Supplemental Index
- Journal :
- ACS Applied Materials & Interfaces
- Publication Type :
- Academic Journal
- Accession number :
- 155918219
- Full Text :
- https://doi.org/10.1021/acsami.9b21530