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MOCVD Epitaxy of Ultrawide Bandgap β‑(AlxGa1–x)2O3 with High-Al Composition on (100) β‑Ga2O3 Substrates.
- Source :
- Crystal Growth & Design; 10/7/2020, Vol. 20 Issue 10, p6722-6730, 9p
- Publication Year :
- 2020
Details
- Language :
- English
- ISSN :
- 15287483
- Volume :
- 20
- Issue :
- 10
- Database :
- Supplemental Index
- Journal :
- Crystal Growth & Design
- Publication Type :
- Academic Journal
- Accession number :
- 146340119
- Full Text :
- https://doi.org/10.1021/acs.cgd.0c00864