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Stress-Induced Crystallization of Thin Hf1–XZrXO2 Films: The Origin of Enhanced Energy Density with Minimized Energy Loss for Lead-Free Electrostatic Energy Storage Applications.
- Source :
- ACS Applied Materials & Interfaces; 2/6/2019, Vol. 11 Issue 5, p5208-5214, 7p
- Publication Year :
- 2019
Details
- Language :
- English
- ISSN :
- 19448244
- Volume :
- 11
- Issue :
- 5
- Database :
- Supplemental Index
- Journal :
- ACS Applied Materials & Interfaces
- Publication Type :
- Academic Journal
- Accession number :
- 144849691
- Full Text :
- https://doi.org/10.1021/acsami.8b17211