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Strong Fermi-Level Pinning at Metal/n-Si(001) Interface Ensured by Forming an Intact Schottky Contact with a Graphene Insertion Layer.

Authors :
Hoon Hahn Yoon
Sungchul Jung
Gahyun Choi
Junhyung Kim
Youngeun Jeon
Yong Soo Kim
Hu Young Jeong
Kwanpyo Kim
Soon-Yong Kwon
Kibog Park
Source :
Nano Letters; Jan2017, Vol. 17 Issue 1, p44-49, 6p
Publication Year :
2017

Details

Language :
English
ISSN :
15306984
Volume :
17
Issue :
1
Database :
Supplemental Index
Journal :
Nano Letters
Publication Type :
Academic Journal
Accession number :
120812251
Full Text :
https://doi.org/10.1021/acs.nanolett.6b03137