FLUENCE AND ANNEAL DEPENDENT VARIATIONS OF RECOMBINATION PARAMETERS IN Si IRRADIATED BY 26 GeV PROTONS.

Carrier capture and thermal emission crucially modify the operational characteristics of particle detectors due to radiation defects. The instrumentation and techniques for carrier lifetime control and mapping developed at Vilnius University are presented in this work. Different regimes addressed to examination of carrier lifetime dependence on 26 GeV proton fluence, to analysis of the performance of trapping centres, activated by postirradiation anneals, and for proton beam profiling are discussed. [ABSTRACT FROM AUTHOR]