Polarity-Controlled GaN/AlN Nucleation Layers for Selective-Area Growth of GaN Nanowire Arrays on Si(111) Substrates by Molecular Beam Epitaxy.

Details

Language :

English

ISSN :

15287483

Volume :

16

Issue :

2

Database :

Supplemental Index

Journal :

Crystal Growth & Design

Publication Type :

Academic Journal

Accession number :

113302137

Full Text :

https://doi.org/10.1021/acs.cgd.5b00910