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Improvement of uniformity in chemical vapor deposition of silicon carbide by using CFD.
- Source :
- Journal of the Korean Physical Society; Jan2016, Vol. 68 Issue 1, p170-175, 6p
- Publication Year :
- 2016
Details
- Language :
- English
- ISSN :
- 03744884
- Volume :
- 68
- Issue :
- 1
- Database :
- Supplemental Index
- Journal :
- Journal of the Korean Physical Society
- Publication Type :
- Academic Journal
- Accession number :
- 112692686
- Full Text :
- https://doi.org/10.3938/jkps.68.170