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Low voltage tunneling magnetoresistance in CuCrO2-based semiconductor heterojunctions at room temperature.
- Source :
- Journal of Applied Physics; 2014, Vol. 116 Issue 22, p223701-1-223701-5, 5p, 2 Diagrams, 3 Graphs
- Publication Year :
- 2014
-
Abstract
- CuCrO<subscript>2</subscript>-based heterojunction diodes with rectifying characteristics have been fabricated by combining p-type Mg-doped CuCrO<subscript>2</subscript> and n-type Al-doped ZnO. It was found that the current for the heterojunction in low bias voltage region is dominated by the trap-assisted tunneling mechanism. Positive magnetoresistance (MR) effect for the heterojunction can be observed at room temperature due to the tunneling-induced antiparallel spin polarization near the heterostructure interface. The MR effect becomes enhanced with the magnetic field, and shows the maximum at a bias voltage around 0.5V. The phenomena indicate that the CuCrO<subscript>2</subscript>-based heterojunction is a promising candidate for low-power semiconductor spintronic devices. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 116
- Issue :
- 22
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 99950217
- Full Text :
- https://doi.org/10.1063/1.4903733