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Low voltage tunneling magnetoresistance in CuCrO2-based semiconductor heterojunctions at room temperature.

Authors :
Li, X. R.
Han, M. J.
Wu, J. D.
Shan, C.
Hu, Z. G.
Zhu, Z. Q.
Chu, J. H.
Source :
Journal of Applied Physics; 2014, Vol. 116 Issue 22, p223701-1-223701-5, 5p, 2 Diagrams, 3 Graphs
Publication Year :
2014

Abstract

CuCrO<subscript>2</subscript>-based heterojunction diodes with rectifying characteristics have been fabricated by combining p-type Mg-doped CuCrO<subscript>2</subscript> and n-type Al-doped ZnO. It was found that the current for the heterojunction in low bias voltage region is dominated by the trap-assisted tunneling mechanism. Positive magnetoresistance (MR) effect for the heterojunction can be observed at room temperature due to the tunneling-induced antiparallel spin polarization near the heterostructure interface. The MR effect becomes enhanced with the magnetic field, and shows the maximum at a bias voltage around 0.5V. The phenomena indicate that the CuCrO<subscript>2</subscript>-based heterojunction is a promising candidate for low-power semiconductor spintronic devices. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00218979
Volume :
116
Issue :
22
Database :
Complementary Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
99950217
Full Text :
https://doi.org/10.1063/1.4903733