Ultra-high resistive switching mechanism induced by oxygen ion accumulation on nitrogen-doped resistive random access memory.

This study presents the dual bipolar resistive switching characteristics induced by oxygen-ion accumulation. By introducing nitrogen to the interface between the resistive switching region and active switching electrode, filament-type and interface-type resistive switching behaviors can both exist under different operation conditions. This particular oxygen-ion accumulation-induced switching behavior suggests an extraordinary potential for resistive random access memory applications because the operating power can be significantly decreased (about 100 times). The physical mechanism of this oxygen-ion accumulation-induced interface-type resistive switching behavior is explained by our model and clarified by current conduction mechanism and material analysis. [ABSTRACT FROM AUTHOR]