Model Based Computation of the Impurity Distribution in the Wall of a Tube Grown From the Melt by the Edge- Defined Film-Fed Growth Technique.

In this paper the impurity distribution is computed in an axis-symmetric (2D) domain, which represents the meniscus and a part of the capillary channel. The model takes into account the pulling rate, thermal convection, molecular diffusion and thermo diffusion. Numerical illustration is given for Al doped cylindrical Si tube wall and the contribution of each effect is evaluated. The main novelties consist in the fact that the axis-symmetric (2D) domain is obtained by a prior computation using the Young-Laplace capillary surface equation and the heat transport equation as well in the inclusion of the thermo diffusion effect in the impurity distribution equation, respectively. [ABSTRACT FROM AUTHOR]