Negative differential resistance induced by x co-dopant in armchair graphene nanoribbon.

By adopting density functional theory in combination with nonequilibrium Green's functions, we investigated the electronic structure and transport properties of silicon/nitrogen (/) co-doping armchair graphene nanoribbons (AGNRs) with _x co-dopant incorporated in neighboring carbon atoms. The results demonstrate that the electronic structure can be modulated by introducing _x co-dopants in AGNRs. The striking negative differential resistance behaviors in the range of low bias can be observed in / co-doped AGNR devices. These remarkable properties suggest the potential application of / co-doping AGNRs in molectronics. [ABSTRACT FROM AUTHOR]