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Correlation of threading screw dislocation density to GaN 2-DEG mobility.
- Source :
- Electronics Letters (Wiley-Blackwell); 11/6/2014, Vol. 50 Issue 23, p1722-1723, 2p, 1 Black and White Photograph, 2 Charts
- Publication Year :
- 2014
-
Abstract
- A direct correlation between local threading screw dislocation densities in an aluminium gallium nitride/gallium nitride (AlGaN/GaN) heterostructure and the mobility of electrons in the two-dimensional electron gas (2-DEG) formed at the interface of that heterostructure is presented. Threading screw dislocations are directly imaged through open areas of Hall-effect test structures using electron channelling contrast imaging. The dislocation density measured for a given test structure is correlated to the mobility of the same structure. The results show a direct, negative correlation between mobility and screw/mixed dislocation density. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00135194
- Volume :
- 50
- Issue :
- 23
- Database :
- Complementary Index
- Journal :
- Electronics Letters (Wiley-Blackwell)
- Publication Type :
- Academic Journal
- Accession number :
- 99337667
- Full Text :
- https://doi.org/10.1049/el.2014.2401