Effects of gamma irradiation on electrical parameters of metal–insulator–semiconductor structure with silicon nitride interfacial insulator layer.

The effects of gamma irradiation on electrical parameters of Au/Si3N4/n-Si (MIS) structure were investigated by using the capacitance–voltage (C–V) and conductance–voltage (G/ω–V) measurements. The MIS structure was irradiated using gamma-radiation source at a dose rate of 0.69 kGy/h. TheC–VandG/ω–Vmeasurements were carried out at a total dose range of 0–100 kGy for five different frequencies (1, 10, 100, 500 and 1000 kHz). The obtained results showed that theCandG/ωvalues decrease with the increasing radiation dose due to the irradiation-induced defects at the interface. Also, the observed decrease in theCandG/ωvalues with the increasing frequency was explained on the basis of interface states (Nss). The values of series resistance (Rs) increase with the increasing radiation dose. To obtain the real capacitance and conductance of the capacitor, the measured values ofCandG/ωwere corrected to eliminate the effect of series resistance. The values ofNsswere determined by using the conductance method and were decreased with the increasing radiation dose. [ABSTRACT FROM PUBLISHER]